mixers - sub-harmonic - chip 3 3 - 14 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc264 v02.1007 general description features functional diagram integrated lo ampli er: -4 dbm input sub-harmonically pumped (x2) lo high 2lo/rf isolation: 40 db small size: 1.32 x 0.97 x 0.1 mm electrical speci cations, t a = +25 c, as a function of lo drive & vdd typical applications the hmc264 is ideal for: ? microwave point-to-point radios ? lmds ? satcom the hmc264 chip is a sub-harmonically pumped (x2) mmic mixer with an integrated lo ampli er which can be used as an upconverter or downcon- verter. the chip utilizes a gaas phemt technology that results in a small overall chip area of 1.28mm 2 . the 2lo to rf isolation is excellent eliminating the need for additional ltering. the lo ampli er is a single bias (+3v to +4v) two stage design with only -4 dbm nominal drive requirement. all data is mea- sured with the chip in a 50 ohm test xture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz parameter if = 1 ghz lo = 0 dbm & vdd = +4v if = 1 ghz lo = -4 dbm & vdd = +4v if = 1 ghz lo = -4 dbm & vdd = +3v units min. typ. max. min. typ. max. min. typ. max. frequency range, rf 24 - 32 20 - 30 22 - 29 ghz frequency range, lo 12 - 16 10 - 15 10.5 - 14.5 ghz frequency range, if dc - 6 dc - 6 dc - 4 ghz conversion loss 10 13 10 12 9 11 db noise figure (ssb) 10 13 10 12 9 11 db 2lo to rf isolation 29 35 29 40 18 22 ~ 30 db 2lo to if isolation 32 40 29 40 ~ 50 25 30 db ip3 (input) 5 13 5 13 3 10 dbm 1 db gain compression (input) +3 +6 -3 0 ~ +4 -5 0 ~ +3 dbm supply current (idd) 28 50 28 50 25 50 ma
mixers - sub-harmonic - chip 3 3 - 15 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = -4 dbm, vdd = +4v conversion gain vs. temperature @ lo = -4 dbm, vdd = +3v conversion gain vs. lo drive @ vdd = +4v conversion gain vs. lo drive @ vdd = +3v isolation @ lo = -4 dbm, vdd = +4v isolation @ lo = -4 dbm, vdd = +3v -25 -20 -15 -10 -5 0 18 20 22 24 26 28 30 32 34 +25c -55c +85c conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 18 20 22 24 26 28 30 32 34 -6 dbm -2 dbm -4 dbm conversion gain (db) rf frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 10 18 20 22 24 26 28 30 32 34 rf/if lo/rf lo/if 2lo/rf 2lo/if isolation (db) rf frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 10 18 20 22 24 26 28 30 32 34 rf/if lo/rf lo/if 2lo/rf 2lo/if isolation (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 18 20 22 24 26 28 30 32 34 -8 dbm -6 dbm -4 dbm -2 dbm 0 dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 18 20 22 24 26 28 30 32 34 +25c -55c +85c conversion gain (db) rf frequency (ghz) hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz
mixers - sub-harmonic - chip 3 3 - 16 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip3 vs. lo drive @ vdd = +4v input ip3 vs. lo drive @ vdd = +3v input ip3 vs. temperature @ lo = -4 dbm, vdd = +4v input ip3 vs. temperature @ lo = -4 dbm, vdd = +3v input ip2 vs. lo drive @ vdd = +4v input ip2 vs. lo drive @ vdd = +3v -10 -5 0 5 10 15 20 18 20 22 24 26 28 30 32 34 -55c +25c +85c ip3 (dbm) rf frequency (ghz) 0 10 20 30 40 50 60 18 20 22 24 26 28 30 32 34 -6 dbm -4 dbm -2 dbm ip2 (dbm) rf frequency (ghz) 0 10 20 30 40 50 60 18 20 22 24 26 28 30 32 34 -6 dbm -4 dbm -2 dbm ip2 (dbm) rf frequency (ghz) -10 -5 0 5 10 15 20 18 20 22 24 26 28 30 32 34 -55c +25c +85c ip3 (dbm) rf frequency (ghz) -10 -5 0 5 10 15 20 18 20 22 24 26 28 30 32 34 -2 dbm -4 dbm -6 dbm ip3 (dbm) rf frequency (ghz) -10 -5 0 5 10 15 20 18 20 22 24 26 28 30 32 34 -2 dbm -4 dbm -6 dbm ip3 (dbm) rf frequency (ghz) hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz
mixers - sub-harmonic - chip 3 3 - 17 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip2 vs. temperature @ lo = -4 dbm, vdd = +4v input ip2 vs. temperature @ lo = -4 dbm, vdd = +3v input p1db vs. temperature @ lo = -4 dbm, vdd = +4v input p1db vs. temperature @ lo = -4 dbm, vdd = +3v -3 -2 -1 0 1 2 3 4 5 6 7 18 20 22 24 26 28 30 32 34 +25c -55c +85c p1db (dbm) rf frequency (ghz) -3 -2 -1 0 1 2 3 4 5 6 7 18 20 22 24 26 28 30 32 34 +25c -55c +85c p1db (dbm) rf frequency (ghz) 0 10 20 30 40 50 60 18 20 22 24 26 28 30 32 34 -55c +25c +85c ip2 (dbm) rf frequency (ghz) 0 10 20 30 40 50 60 18 20 22 24 26 28 30 32 34 -55c +25c +85c ip2 (dbm) rf frequency (ghz) hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz
mixers - sub-harmonic - chip 3 3 - 18 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mxn spurious outputs @ lo drive = -4 dbm, vdd = +4v if bandwidth @ lo = -4 dbm, vdd = +4v nlo mrf 5 4 3 2 1 0 -3 -2 -36 -1 -54 -22 -34 0-15+26 1x-30-10 2-54-38-66 3-74-67 rf = 30 ghz @ -10 dbm lo = 13.5 ghz @ -4 dbm all values in dbc below the if power level upconverter performance conversion gain, lo = -4 dbm return loss @ lo = -4 dbm, vdd = +4v -25 -20 -15 -10 -5 0 012345678910 if conversion gain (db) if frequency (ghz) -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 if rf lo return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 16 18 20 22 24 26 28 30 32 34 vdd = +4v vdd = +3v conversion gain (db) rf frequency (ghz) hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz
mixers - sub-harmonic - chip 3 3 - 19 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings rf / if input (vdd = +4v) +13 dbm lo drive (vdd = +4v) +13 dbm vdd +5.5 vdc storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz pad number function description interface schematic 1vdd power supply for the lo ampli er. an external rf bypass capacitor of 100 - 330 pf is required. a mim border capacitor is recommended. the bond length to the capacitor should be as short as possible. the ground side of the capacitor should be connected to the housing ground. 2rf this pad is ac coupled and matched to 50 ohm. 3if this pad is dc coupled and should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. any applied dc voltage to this pin will result in die non-function and pos- sible die failure. 4lo this pad is ac coupled and matched to 50 ohm. pad descriptions
mixers - sub-harmonic - chip 3 3 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz outline drawing notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. bond pad spacing center to center is .006. 5. backside metallization: gold. 6. bond pad metallization: gold. 7. backside metal is ground. 8. connection not required for unlabeled bond pads. die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
mixers - sub-harmonic - chip 3 3 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. the photo in gure 3 shows a typical assembly for the hmc264 mmic chip. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). figure 3: typical hmc264 assembly 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc264 v02.1007 gaas mmic sub-harmonically pumped mixer, 20 - 32 ghz
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